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BAS116TT1G
http://onsemi.com
2
ELECTRICAL CHARACTERISTICS (TA
= 25
°C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Reverse Breakdown Voltage (IBR
= 100
Adc)
V(BR)
75
?
Vdc
Reverse Voltage Leakage Current (VR
= 75 Vdc)
Reverse Voltage Leakage Current (VR
= 75 Vdc, T
J
= 150
°C)
IR
?
?
5.0
80
nAdc
Forward Voltage (IF
= 1.0 mAdc)
Forward Voltage (IF
= 10 mAdc)
Forward Voltage (IF
= 50 mAdc)
Forward Voltage (IF
= 150 mAdc)
VF
?
?
?
?
900
1000
1100
1250
mV
Diode Capacitance (VR
= 0 V, f = 1.0 MHz)
CD
?
2.0
pF
Reverse Recovery Time (IF
= I
R
= 10 mAdc) (Figure 1)
trr
?
3.0
s
1. A 2.0 k
variable resistor adjusted for a Forward Current (I
F) of 10 mA.
2. Input pulse is adjusted so IR(peak)
is equal to 10 mA.
3. tp
? t
rr
+10 V
2.0 k
820
0.1 F
DUT
VR
100 H
0.1 F
50
Output
Pulse
Generator
50
INPUT
SAMPLING
OSCILLOSCOPE
tr
tp
t
10%
90%
IF
IR
trr
t
iR(REC)
= 1.0 mA
OUTPUT PULSE
(IF
= I
R
= 10 mA; MEASURED
at iR(REC)
= 1.0 mA)
IF
INPUT SIGNAL
Figure 1. Recovery Time Equivalent Test Circuit
TYPICAL CHARACTERISTICS
Figure 2. Forward Voltage Figure 3. Capacitance
VF, FORWARD VOLTAGE (V) VR, REVERSE VOLTAGE (V)
1.2
1.0
0.8
0.6
0.4
0.2
0
0.1
1
10
100
1,000
70
60
50
40
30
20
10
0
0
0.2
0.4
0.6
0.8
1.0
1.2
I
F
, FORWARD CURRENT (mA)
C
T
, TOTAL CAPACITANCE (pF)
150°C
?55°C
25°C
80
TA
= 25
°C
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